Basic Model of the Stationary X-ray Induced Conductivity of Wide-Gap Semiconductors
Keywords:
X-ray, model, stationary, conductivity, ZnSe, semiconductor, radiation, detector
Abstract
The concept of construction and stage-by-stage development of basic model of stationary X-ray induced conductivity for wide-gap semiconductors is proposed. Within the limits of first stage, calculation of spatial distribution of the generated electrons and holes in an ideal crystal which absorbs X-ray flux is carried out and volt-ampere characteristic is calculated.
Downloads
- Article PDF
- TEI XML Kaleidoscope (download in zip)* (Beta by AI)
- Lens* NISO JATS XML (Beta by AI)
- HTML Kaleidoscope* (Beta by AI)
- DBK XML Kaleidoscope (download in zip)* (Beta by AI)
- LaTeX pdf Kaleidoscope* (Beta by AI)
- EPUB Kaleidoscope* (Beta by AI)
- MD Kaleidoscope* (Beta by AI)
- FO Kaleidoscope* (Beta by AI)
- BIB Kaleidoscope* (Beta by AI)
- LaTeX Kaleidoscope* (Beta by AI)
How to Cite
Dr. A.O. Sofiienko, V.Ya. Degoda, & V.N. Kilin. (2012). Basic Model of the Stationary X-ray Induced Conductivity of Wide-Gap Semiconductors. Global Journal of Science Frontier Research, 12(A3), 9–11. Retrieved from https://journalofscience.org/index.php/GJSFR/article/view/377
Published
2012-03-15
Issue
Section
Articles
License
Copyright (c) 2012 Authors and Global Journals Private Limited
This work is licensed under a Creative Commons Attribution 4.0 International License.