Effects of Indium Composition and the Size on the Electronic Structure nS-nP of Quantum Dots InN/InxGa1-xN/Ligand
Keywords:
inhomogeneous quantum dot; core/shell; electronic structure; two levels system; quantum efficiency; photostability
Abstract
The electronic structure of homogeneous and inhomogeneous quantum dots involves fascinating optoelectronic properties. Herein, a detailed theoretical and numerical investigation of the electronic structure of spherical inhomogeneous quantum dots InN/InxGa1-xN/Ligand, based Indium and Gallium Nitride, with a variable composition x of Indium. A more real profile is adopted with a finite potential shell and variable thickness. The ligand and solution impose external confinement. With such shell InxGa1-xN, a minimum of defects is ensured at the interface, and the structure is passivated. Along with this work, we will explore the effects of the various parameters of this nanosystem on its gap, on the location of charge carriers and the distribution of nS-nP energy levels. We will show how the dimensions of the material core InN, the material shell InxGa1-xN, and the Indium-composition x control the characteristics of the nanosystem and consequently improve the electronic and optical properties. Then a detailed calculation of the electronic structure will be made.
Downloads
- Article PDF
- TEI XML Kaleidoscope (download in zip)* (Beta by AI)
- Lens* NISO JATS XML (Beta by AI)
- HTML Kaleidoscope* (Beta by AI)
- DBK XML Kaleidoscope (download in zip)* (Beta by AI)
- LaTeX pdf Kaleidoscope* (Beta by AI)
- EPUB Kaleidoscope* (Beta by AI)
- MD Kaleidoscope* (Beta by AI)
- FO Kaleidoscope* (Beta by AI)
- BIB Kaleidoscope* (Beta by AI)
- LaTeX Kaleidoscope* (Beta by AI)
How to Cite
Published
2020-07-15
Issue
Section
License
Copyright (c) 2020 Authors and Global Journals Private Limited
This work is licensed under a Creative Commons Attribution 4.0 International License.