Stresses Relaxation Mechanism in the Si-SiO2 System and its Influence on the Interface Properties

Authors

  • Daniel Kropman

  • Viktor Seeman

  • Artur Medvids

Keywords:

Si-SiO2 interface, stress relaxation, EPR, SEM

Abstract

The results of the investigation of stresses relaxation by strain by means of EPR spectra, IR absorption spectra, SEM and samples deflection are presented. It has been shown that stresses relaxation mechanism depended on the oxidation condition: temperature, cooling rate, oxide thickness. In the Si-SiO2-Si3N4 system the stresses relaxation by the strain occur due to the opposite sign of the thermal expansion coefficient of Si-SiO2 and Si3N4 on Si. Laser irradiation allows to modify the system stresses.

How to Cite

Daniel Kropman, Viktor Seeman, & Artur Medvids. (2017). Stresses Relaxation Mechanism in the Si-SiO2 System and its Influence on the Interface Properties. Global Journal of Science Frontier Research, 17(B1), 1–5. Retrieved from https://journalofscience.org/index.php/GJSFR/article/view/1971

Stresses Relaxation Mechanism in the Si-SiO2 System and its Influence on the Interface Properties

Published

2017-01-15