Electronic Transport Properties in Bulk ZnO and Zn1-xMgxO Using Monte Carlo Simulation

Authors

  • H. Arabshahi

  • F. Nofeli

Keywords:

Electron Transport, Monte Carlo Simulation, Wurtzite Zn1-xMgxO, Effective Mass

Abstract

In this paper an investigation with the application of Monte Carlo simulations to steadystate electron transport and low-field electron mobility characteristics of in bulk ZnO in the wurtzite crystal structure and its alloy Zn1-xMgxO with different doping of Mg x 0 05 0 1 and 0 2 The Monte Carlo calculations are carried out using a three-valley model for the systems under consideration The following scattering mechanisms i e impurity polar optical phonon and acoustic phonon are included in the calculation The maximum electron drift velocity that is obtained at room temperature for 1023 m-3 donor concentration is 1 97 107 cms-1 for ZnO in threshold field of 400 kV cm While the maximum electron drift velocity is 1 62 107 cms-1 1 03 107 cms-1 and 0 43 10 7 cms-1 for Zn0 95Mg0 05O Zn0 9Mg0 1O and Zn0 8Mg0 2O in threshold field 700 kV cm respectively It can be seen the peak drift velocity for bulk ZnO is 1 97 107cms-1 while for Zn1_xMgxO the peak drift velocity decreases due to increasing electron effective mass

How to Cite

H. Arabshahi, & F. Nofeli. (2015). Electronic Transport Properties in Bulk ZnO and Zn1-xMgxO Using Monte Carlo Simulation. Global Journal of Science Frontier Research, 15(A3), 119–125. Retrieved from https://journalofscience.org/index.php/GJSFR/article/view/1479

Electronic Transport Properties in Bulk ZnO and Zn1-xMgxO  Using Monte Carlo Simulation

Published

2015-03-15