Basic Model of the Stationary X-ray Induced Conductivity of Wide-Gap Semiconductors
X-ray, model, stationary, conductivity, ZnSe, semiconductor, radiation, detector
Abstract
The concept of construction and stage-by-stage development of basic model of stationary X-ray induced conductivity for wide-gap semiconductors is proposed. Within the limits of first stage, calculation of spatial distribution of the generated electrons and holes in an ideal crystal which absorbs X-ray flux is carried out and volt-ampere characteristic is calculated.
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2012-04-07
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