Using Gaussas Law in Determinating the Width Emitter Extension Region of the Solar Cell Operating in Open Circuit Condition
Keywords:
Doping density, extension region width, grain size, grain boundary recombination velocity
Abstract
In this article, we are discussing the Gauss’s law used to determine the width emitter extension region of the solar cell operating in open circuit condition. Taking into account the grain size (g), the grain boundary recombination velocity (Sgb) and the emitter doping density (Nemitter), the Gaussian Law helped us to calculate the width emitter extension region of the solar cell operating in open circuit condition. To determine the width emitter extension region, we first showed that grain size (g), grain boundary recombination velociy (Sgb) are oppesite effects and concluded that best solar cells are characterized by low junction extension region width observed only with high grain size (g) and low grain boundary recombination velocity (Sgb).
Downloads
- Article PDF
- TEI XML Kaleidoscope (download in zip)* (Beta by AI)
- Lens* NISO JATS XML (Beta by AI)
- HTML Kaleidoscope* (Beta by AI)
- DBK XML Kaleidoscope (download in zip)* (Beta by AI)
- LaTeX pdf Kaleidoscope* (Beta by AI)
- EPUB Kaleidoscope* (Beta by AI)
- MD Kaleidoscope* (Beta by AI)
- FO Kaleidoscope* (Beta by AI)
- BIB Kaleidoscope* (Beta by AI)
- LaTeX Kaleidoscope* (Beta by AI)
How to Cite
Published
2012-03-15
Issue
Section
License
Copyright (c) 2012 Authors and Global Journals Private Limited
This work is licensed under a Creative Commons Attribution 4.0 International License.