DANIEL KROPMAN; VIKTOR SEEMAN; ARTUR MEDVIDS. Stresses Relaxation Mechanism in the Si-SiO2 System and its Influence on the Interface Properties. Global Journal of Science Frontier Research, [S. l.], v. 17, n. B1, p. 1–5, 2017. Disponível em: https://journalofscience.org/index.php/GJSFR/article/view/1971. Acesso em: 28 apr. 2024.